Magnetic field sensitive diode and method of making same

Details Magnetic field sensitive diode and method of making same Magnetic field sensitive diode and method of making same

1976-05-04

1977-04-12

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 55, 357 58, 357 63, 307308, 307309, H01L 2722, H01L 2982, H01L 2996, H01L 4300

Patent

active

040178846

ABSTRACT:
A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.

REFERENCES:
patent: 3272668 (1966-09-01), Miller et al.
patent: 3374124 (1968-03-01), Tavendale
patent: 3461005 (1969-08-01), Jamini
patent: 3553498 (1971-01-01), Xamada
patent: 3553540 (1971-01-01), Puterbaush
patent: 3612869 (1971-10-01), Baum
patent: 3911468 (1975-10-01), Fujikawa

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