Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-01-29
2009-02-24
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S427000, C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
07495303
ABSTRACT:
A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
REFERENCES:
patent: 6714444 (2004-03-01), Huai et al.
patent: 6829161 (2004-12-01), Huai et al.
patent: 6906949 (2005-06-01), Nakamura et al.
patent: 6953601 (2005-10-01), Li et al.
patent: 2003/0007398 (2003-01-01), Daughton et al.
patent: 2003/0179510 (2003-09-01), Hayakawa
patent: 2004/0136231 (2004-07-01), Huai et al.
J.C. Slonczewski, Current-driven excitation of magnetic multilayers, Journal of Magnetism and Magnetic Materials, vol. 159, pp. L1-L7 (1996).
L. Berger, Emission of spin waves by a magnetic multilayer traversed by a current, The American Physical Society, Physical review B, vol. 54, No. 13, pp. 9353-9358 (Oct. 1, 1996).
F.J. Albert, et al., Spin-polarized current switching of a Co thin film nanomagnet, American Institute of Physics, Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811 (Dec. 4, 2000).
Y. Jiang, et al., Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve, Published online: May 9, 2004; doi:10.1038
mat1120.
Y. Jiang, et al., Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin Valve, The American Physical Society, Physical Review Letters, vol. 92, No. 16, pp. 1-4 (Apr. 23, 2004).
Diao Zhitao
Huai Yiming
Nguyen Paul P.
Pakala Mahendra
Valet Thierry
Bernstein Allison P
Elms Richard
Grandis Inc.
Strategic Patent Group P.C.
LandOfFree
Magnetic elements with spin engineered insertion layers and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic elements with spin engineered insertion layers and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic elements with spin engineered insertion layers and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4126757