Magnetic element having reduced current density

Details Magnetic element having reduced current density Magnetic element having reduced current density

2011-04-26

2011-04-26

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000

Reexamination Certificate

active

07932571

ABSTRACT:
A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.

REFERENCES:
patent: 6920063 (2005-07-01), Huai et al.
patent: 6992359 (2006-01-01), Nguyen et al.
patent: 2004/0085681 (2004-05-01), Kai et al.
patent: 2004/0257192 (2004-12-01), Mori et al.
patent: 2007/0195594 (2007-08-01), Koga
patent: 2007/0263429 (2007-11-01), Yamamoto et al.
patent: 2007075889 (2007-07-01), None
PCT Search Report for Application PCT/US2008/079471 mailed on Jan. 20, 2009.
Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, and Hideo Ohno, “Current-Induced Magnetization Switching in NgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer,” JJAP vol. 45, No. 40, 2006, pp. L1057-L1060.
Shiho Nakamura, Shigeru Haneda and Hirofumi Morise, “Current-Induced Magnetization Switching in Two Types of Nanopillar with Dual Fixed Layers,” JJAP, vol. 45, No. 5A, 2006, pp. 3846-3849.
Dr. G. Pan, “MRAM—present state-of-the-art and future challenges,” Jan. 16, 2006.
Freescale Semiconductor, Inc., “Magnetoresistive Random Access Memory,” Jun. 23, 2006.
Fukumoto, Y. et al.; “Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers”; Applied Physics Letters 89; 2006; pp. 061909-1 thru 061909-3; American Institute of Physics.

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