Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-03-28
2009-10-06
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE29323, C257SE43001, C977S933000
Reexamination Certificate
active
07598578
ABSTRACT:
A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode, a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer, a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode, a first electrode which is connected to the first magnetic electrode, and a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
REFERENCES:
patent: 5864498 (1999-01-01), Womack
patent: 6480412 (2002-11-01), Bessho et al.
patent: 6646530 (2003-11-01), Ruhrig
patent: 6717843 (2004-04-01), Thewes et al.
patent: 6754100 (2004-06-01), Hayakawa
patent: 6762954 (2004-07-01), Edelstein
patent: 6914807 (2005-07-01), Nakamura et al.
patent: 2003/0227807 (2003-12-01), Nakamura et al.
patent: 2004/0136120 (2004-07-01), Hayakawa et al.
patent: 2004-6775 (2004-01-01), None
Ney et al., “Programmable computing with a single magnetoresistive element”, Nature, vol. 425, Oct. 2, 2003.
Meyners et al., “Submicron-sized magnetic tunnel junctions in field programmable logic gate arrays”, Journal of Applied Physics 99, pp. 023907-1-023907-4, Jan. 27, 2006.
Meng et al., “A Spintronics Full Adder For Magnetic CPU”, IEEE Electron Device Letters, vol. 26, No. 6, Jun. 2005.
Sugahara et al., “A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain”, Applied Physics Letters, vol. 84, No. 13, Mar. 29, 2004.
Matsuno et al., “Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Field-Effect Transistors”, Japanese Journal of Applied Physics, vol. 43, No. 9A, 2004, pp. 6032-6037.
Haneda Shigeru
Morise Hirofumi
Nakamura Shiho
Kabushiki Kaisha Toshiba
Lulis Michael
Nixon & Vanderhye PC
Phung Anh
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