Magnetic domain device having a wide operational temperature ran

Details Magnetic domain device having a wide operational temperature ran Magnetic domain device having a wide operational temperature ran

1981-11-09

1983-12-06

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of inorganic material

365 33, 156610, 156617SP, 156621, 156DIG63, 252 6257, 252 6258, 252 6259, 428693, 428700, 428900, G11C 1114

Patent

active

044194170

ABSTRACT:
Yttrium-iron magnetic domain materials having bismuth ions on dodecahedral sites are suitable for the manufacture of high-density, high-speed magnetic domain devices for operation at high and especially at very low temperatures. In these devices magnetic domain velocity is greater than 2000 centimeters per second per oersted, and magnetic domain diameter is less than 3 micrometers. A specified operational temperature range may extend from -150 to 150 degrees C.; accordingly, such devices are particularly suitable for operation aboard satellites, e.g., in satellite communications systems.

REFERENCES:
patent: 3648260 (1972-03-01), Gyorgy et al.
patent: 4002803 (1977-01-01), Blank
patent: 4018692 (1977-04-01), Akselrad et al.
patent: 4034358 (1977-07-01), Blank
patent: 4165410 (1979-08-01), Blank

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