Magnetic devices and techniques for formation thereof

Details Magnetic devices and techniques for formation thereof Magnetic devices and techniques for formation thereof

2005-08-23

2008-07-15

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S004000, C257SE21665

Reexamination Certificate

active

07399646

ABSTRACT:
Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.

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