Magnetic devices and sensors based on perovskite manganese oxide

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428693, 428701, 428702, 428900, 324252, 338 32R, 360113, G11B 5147

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active

057925690

ABSTRACT:
A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.

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