Magnetic bubble memory chip

Details Magnetic bubble memory chip Magnetic bubble memory chip

1984-10-15

1986-02-04

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of inorganic material

252 6257, 365 33, 428900, 428910, 428700, 428702, G11B 564

Patent

active

045686181

ABSTRACT:
In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memory chip (2) after conductor paterns are formed thereon, it is necessary that the temperature coefficient of the collapse field of the magnetic garnet crystal film (51) be from 0.01 to 0.04%/.degree.C., in terms of an absolute value, greater than the temperature coefficient of the above-mentioned residual magnetization (56). The present invention achieves this by increasing the degree of substitution of Lu ions for Fe ions in the octahedral sites constituting the unit lattice of the magnetic garnet crystal. As a result, an operating temperature range about twice as wide as the conventional operating temperature range is ensured.

REFERENCES:
patent: 4002803 (1977-01-01), Blank
patent: 4165410 (1979-08-01), Blank
patent: 4169189 (1979-09-01), Stacey
patent: 4239805 (1980-12-01), Jonker
patent: 4338372 (1982-07-01), Ohta

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