Magnetic bubble devices with controlled temperature characterist

Details Magnetic bubble devices with controlled temperature characterist Magnetic bubble devices with controlled temperature characterist

1975-08-25

1977-01-11

Ansher, Harold

Stock material or miscellaneous articles

Metal continuous phase interengaged with nonmetal continuous...

252 6257, 252 6259, 252 6263, 340174TF, 428900, G11C 1114, G11B 500

Patent

active

040028038

ABSTRACT:
The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely matches the temperature dependence of available bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). A preferred substitution species is lutetium, known as a dodecahedral site occupant, for which it has been determined that a significant and controllable octahedral occupancy can be produced by suitable choice of growth conditions.

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