Magnetic bubble devices with controlled temperature characterist

Details Magnetic bubble devices with controlled temperature characterist Magnetic bubble devices with controlled temperature characterist

1975-08-25

1977-07-05

Curtis, Marshall M.

Communications: electrical

Digital comparator systems

252 6257, G11C 1102

Patent

active

040343588

ABSTRACT:
The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely match the temperature dependence of bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). Layer growth at higher temperature results in a larger rate of change of collapse field by producing greater octahedral occupation of predominantly tetrahedrally coordinated germanium.

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