Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-08-01
2006-08-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S005000, C257SE21665
Reexamination Certificate
active
07083988
ABSTRACT:
A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.
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Fourson George
Garcia Joannie Adelle
Knobbe Martens Olson & Bear LLP
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