Magnet tunneling junction with RF sputtered gallium oxide as...

Details Magnet tunneling junction with RF sputtered gallium oxide as... Magnet tunneling junction with RF sputtered gallium oxide as...

2005-02-09

2008-11-18

Chen, Tianjie (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07453673

ABSTRACT:
A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Ω·μm2.

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