Magnesium-titanate-comprising spinel single crystal substrate fo

Details Magnesium-titanate-comprising spinel single crystal substrate fo Magnesium-titanate-comprising spinel single crystal substrate fo

1975-07-29

1976-11-09

Douglas, Winston A.

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

106 734, C04B 3544, C04B 3546

Patent

active

039909026

ABSTRACT:
A spinel single crystal substrate for epitaxial growth thereon of a semiconductor layer to manufacture semiconductor devices. Magnesium titanate is substituted for at least a portion of magnesium aluminate of which the spinel essentially consist in general. A preferred mol ratio of the magnesium titanate to the magnesium aluminate is between 5:95 and 40:60 when a silicon layer is to be epitaxially grown on the substrate as the semiconductor layer.

REFERENCES:
patent: 2436840 (1948-03-01), Wainer
patent: 2691088 (1954-10-01), Ungewis
patent: 3531308 (1970-09-01), Bagley
patent: 3713877 (1973-01-01), Kirchner

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