Magnesium doping in III-V compound semiconductor

Details Magnesium doping in III-V compound semiconductor Magnesium doping in III-V compound semiconductor

1993-03-04

1995-01-17

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117925, 117937, H01L 21223

Patent

active

053817567

ABSTRACT:
A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compound semiconductor layers, all or some of the p-type layers are grown by using a Mg organo-metallic compound as a p-type impurity and adding an Al organo-metallic compound of a predetermined amount. Doping both the Mg organo-metallic compound and Al organo-metallic compound at the same time considerably shortens the Mg doping delay.

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Nishikawa et al., "Anomalous Mg Incorporation Behavior in InGaAIP Grown by Metalorganic Chemical Vapor Deposition," Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai, 1990, pp. 509-512.
Hatano et al., "Magnesium Doping Using an Adduct of Trimethylaluminum and Dimethylmagnesium in Metalorganic Chemical Vapor Depositon," Journal of Crystal Growth, vol. 115, North-Holland, 1991, pp. 455-459.
Hatano et al., "New Magnesium Doping Source for Metalorganic Chemical Vapor Deposition: Octamethyldialuminummonomagnesium," Appl. Phys. Lett., vol. 58, No. 14, Apr. 8, 1991, pp. 1488-1490.

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