Magnesium-doping in III-V compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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117200, 437 5, 437126, H01L 21223

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054580854

ABSTRACT:
A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compound semiconductor layers, all or some of the p-type layers are grown by using a Mg organo-metallic compound as a p-type impurity and adding an Al organo-metallic compound of a predetermined amount. Doping both the Mg organo-metallic compound and Al organo-metallic compound at the same time considerably shortens the Mg doping delay.

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Hatano et al., "Magnesium Doping Using an Adduct of Trimethylaluminum and Dimethylmagnesium in Metalorganic Chemical Vapor Deposition," Journal of Crystal Growth, vol. 115, North-Holland, 1991, pp. 455-459.
Hatano et al., "New Magnesium Doping Source for Metalorganic Chemical Vapor Deposition: Octamethyldialuminummonomagnesium," Appl. Phys. Lett., vol. 58, No. 14, Apr. 18, 1991, pp. 1488-1490.
Kondo et al., "Mg-Doping Transients During Metalorganic Vapor Phase Epitaxy of GaAs and AlGalnP," Journal of Crystal Growth, Apr. 1994.

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