Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-10-19
1995-10-17
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117200, 437 5, 437126, H01L 21223
Patent
active
054580854
ABSTRACT:
A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compound semiconductor layers, all or some of the p-type layers are grown by using a Mg organo-metallic compound as a p-type impurity and adding an Al organo-metallic compound of a predetermined amount. Doping both the Mg organo-metallic compound and Al organo-metallic compound at the same time considerably shortens the Mg doping delay.
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Anayama Chikashi
Kondo Makoto
Breneman R. Bruce
Fujitsu Limited
Garrett Felisa
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