Machine and method for high vacuum controlled ramping curing fur

Drying and gas or vapor contact with solids – Apparatus – With means to treat gas or vapor

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437231, 437235, 437236, 437248, 437228, 34 92, F26B 504, H01L 21469

Patent

active

051740435

ABSTRACT:
An apparatus is described for vacuum degassing and curing a spin-on-glass layer on an article. The machine has a chamber into which an article, such as at least one or more semiconductor wafers are moved by appropriate means. Means are provided for causing the chamber to be evacuated and for continuing to maintain the vacuum at less than about 100 mtorr. The temperature of the article is maintained at a substantially constant level within a first range of temperature by appropriate means during the vacuum degassing. Means are provided to ramping the temperature at a controlled rate from the first range of temperature up to the desired second range of temperature for curing of the spin-on-glass layer. The temperature of the article is maintained at a substantially constant level within the second range of temperature by suitable means for the curing. Means are provided to allow a constant inert gas flow to fill the chamber under the vacuum conditions during the operation. Means are provided for cooling the chamber and the article.

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Gupta et al; "Interlevel Dielectric planarization with Spin-on-glass films"; V-MIC conference; Jun. 1986; pp. 506-515.
Yen et al.; "Defect integration with spin-on-glass sandwich as an Intermetal Dielectric Layer for 1.2 Micrometer CMOS DLM process"; V-MIC Conference; Jun. 13-14, 1988; pp. 85-94.
Forester et al; "SOE planarization for polysilicon and first metal interconnect in a one micron CMOS process"; V-MIC Confer.; Jun. 1988; pp. 72-79.

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