Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-06-28
2005-06-28
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S133000, C257S137000, C257S355000
Reexamination Certificate
active
06911679
ABSTRACT:
In an ESD protection device making use of a LVTSCR, at least one contacted drain and at least one emitter are formed, and are arranged laterally next to each other to be substantially equidistant from the gate of the LVTSCR, to improve holding voltage and decrease size. The ratio of emitter width to contacted drain width is adjusted to achieve the desired characteristics.
REFERENCES:
patent: 5959820 (1999-09-01), Ker et al.
patent: 6493199 (2002-12-01), Su et al.
patent: 6548868 (2003-04-01), Tsuei et al.
patent: 2003/0058592 (2003-03-01), Hung et al.
Beek Marcel ter
Concannon Ann
Hopper Peter J.
Vashchenko Vladislav
National Semiconductor Corp.
Vollrath Jurgen
Wilson Allan R.
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