LVTSCR-like structure with blocking junction under the polygate

Details LVTSCR-like structure with blocking junction under the polygate LVTSCR-like structure with blocking junction under the polygate

2006-02-14

2006-02-14

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S162000, C257S355000

Reexamination Certificate

active

06998651

ABSTRACT:
In a LVTSCR-like structure, an additional p+ region is formed adjacent a n+ floating drain to define a p-n junction with the floating drain underneath a polygate of the structure. The polygate is used as a mask during doping of the p+ region and the n+ floating drain, and the length of the polygate is adjusted to provide the desired triggering voltage for the structure. The triggering voltage is also adjusted by biasing the polygate.

REFERENCES:
patent: 5240865 (1993-08-01), Malhi
patent: 6750515 (2004-06-01), Ker et al.

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