Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1982-11-09
1984-07-03
Griffin, Donald A.
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
29 2542, 357 51, H01G 410, H01G 700, H01L 2702
Patent
active
044582951
ABSTRACT:
Lumped passive components including a capacitor having a silicon nitride dielectric, a tantalum film resistor, and a capacitor having a tantalum oxide dielectric are formed on a semi-insulating substrate by first providing an insulating layer, here of silicon nitride, over the substrate and metal contacts having previously been formed on such substrate. The metal contacts provide a first plate for each one of such capacitors. A tantalum layer is reactively sputtered on the insulating layer, and a protective masking layer is next provided on such tantalum layer. An area where the anodized tantalum capacitor is to be formed is then opened in the protective masking layer over a selected one of the metal contacts. A portion of the tantalum is anodized in such area to form an area of a tantalum oxide (Ta.sub.2 O.sub.5). The area where the tantalum oxide is formed is confined generally to the area in the tantalum layer over the contact. The masking layer is removed and a second masking layer is patterned to provide an etching mask used to etch the tantalum layer to define each one of such capacitors, and to provide a strip of tantalum, defining a region for said tantalum resistor. Top metal contacts are then provided aligned with the first set of such contacts, and thus providing a second metal plate of the anodized tantalum capacitor and a second metal plate of the silicon nitride capacitor. Further, a set of metal contacts is provided to each end of the tantalum strip to provide the tantalum resistor.
REFERENCES:
patent: 3257592 (1966-06-01), Maissel
patent: 3864817 (1975-02-01), Lapham et al.
Durschlag Mark S.
Vorhaus James L.
Griffin Donald A.
Maloney Denis G.
Pannone Joseph D.
Raytheon Company
Sharkansky Richard M.
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