Luminescent material, luminescent thin film therefrom, and optic

Details Luminescent material, luminescent thin film therefrom, and optic Luminescent material, luminescent thin film therefrom, and optic

1976-01-28

1978-04-04

McCamish, Marion E.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Including a second component containing structurally defined...

427 64, 427 68, 427 71, 427 85, 427215, 428403, 428539, B32B 516

Patent

active

040828891

ABSTRACT:
This disclosure provides a polycrystalline semiconductor material which has a high luminous efficiency because of an especial profile of impurity concentration within each grain thereof. The regions immediately adjacent to the grain surfaces or grain boundaries are preferentially and selectively doped with impurity atoms to achieve a relatively high concentration of majority carriers of the same conductivity type as is in the grain center. As a result of the noted doping profile in the material, minority carriers which are excited within each grain by externally originated radiation are confined to the central portion of the grain where they emit electromagnetic radiation by efficient luminescent recombination. The material of this disclosure in polycrystalline thin film form obtains a high resolution screen for an electron beam optical display device.

REFERENCES:
patent: 3898509 (1975-08-01), Brown

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