Luminescent diode having multiple hetero junctions

Metal treatment – Stock – Ferrous

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357 16, 357 38, 357 68, 148171, H01L 3300, H01L 29203, H01L 29205

Patent

active

042964253

ABSTRACT:
A luminescent diode comprises a p.sup.+ type substrate, at least one electron-hole recombination unit consisting of a p-type layer of a certain band gap and an n-type layer of a wider band gap epitaxially grown on said p-type layer to form a hetero junction at the interface therebetween, and a low resistivity contact disposed on an outermost surface of said unit opposite to said substrate. In the unit, said p-type layer is positioned closer to said substrate than said n-type layer. Light emitted in the vicinity of the hetero junction in the p-type layer of the unit is transmitted through this hetero junction and the n-type layer to emit from the outermost surface of the unit.

REFERENCES:
patent: 3677863 (1972-07-01), Lorenz
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3798083 (1974-03-01), Schmidt
patent: 3806777 (1974-04-01), Edmonds
patent: 3812516 (1974-05-01), Hayashi et al.

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