Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2005-08-09
2005-08-09
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S099000, C257S778000, C257S779000, C257S788000, C257S790000, C438S026000, C438S108000, C438S124000, C438S126000, C438S127000, C438S612000
Reexamination Certificate
active
06927425
ABSTRACT:
A luminescent diode chip for flip-chip mounting on a carrier, having a conductive substrate (12), a semiconductor body (14) that contains a photon-emitting active zone and that is joined by an underside to the substrate (12), and a contact (18), disposed on a top side of the semiconductor body (14), for making an electrically conductive connection with the carrier (30) upon the flip-chip mounting of the chip, whereby either the carrier is solder covered or a layer of solder is applied to the contact. An insulating means (40, 42, 44, 46, 48) is provided on the chip, for electrically insulating free faces of the semiconductor body (14) and free surfaces of the substrate (12) from the solder.
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Eisert Dominik
Harle Volker Klaus
Cohen & Pontani, Lieberman & Pavane
Loke Steven
Osram Opto Semiconductors GmbH
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