1977-01-28
1977-12-06
Edlow, Martin H.
357 23, H01L 3300
Patent
active
040620352
ABSTRACT:
A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrode is light transmissive. The crystal structure of the insulating layer is substantially the same as the crystal structure of the semiconductor body and has a spacing of energy bands which is greater than the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body. The interval of the energy bands of the insulating layer is at least 2 kT greater than the interval of the energy bands of the semiconductor body. It is preferable that the crystal structure of the insulating layer have a deviation of its lattice interval of less than 1% from that of the semiconductor body.
REFERENCES:
patent: 3492548 (1970-01-01), Goodman
patent: 3783353 (1974-01-01), Parkove
patent: 3806774 (1974-04-01), Hartman
patent: 3849707 (1974-11-01), Braslan
patent: 3978507 (1976-08-01), Fertin
Edlow Martin H.
Siemens Aktiengesellschaft
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