Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2004-02-02
2008-08-05
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S083000, C257SE33064
Reexamination Certificate
active
07408191
ABSTRACT:
In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT.As the insulating films117, 317and417provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion, for example, a silicon nitride film containing a large amount of fluorine, a silicon oxynitride film containing a large amount of fluorine or an organic resin film containing a particle consisted of an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound is used.
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Asami Taketomi
Ichijo Mitsuhiro
Murakami Satoshi
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan
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