Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-05-22
2007-05-22
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S072000, C313S506000
Reexamination Certificate
active
11183819
ABSTRACT:
An object is to improve the element characteristic of a luminescent element. In an anode122connected to a drain interconnection120of a current-controlling TFT202, slits are made. A transparent hole generating layer124is formed on the anode122. Since the slits are made, luminescence can be taken out even if a light-shielding metal film is used as the anode122. Since the hole generating layer124has semiconductivity, an electric field applied from the anode122to an organic compound layer125can be made uniform. Since holes are generated in the hole generating layer124, the density of carriers injected from the anode122can be made high. In this way, a luminescent element having a low driving voltage and a high brightness can be manufactured.
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Fish & Richardson P.C.
Huynh Andy
Semiconductor Energy Laboratory Co,. Ltd.
Taylor Earl N.
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