Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2008-04-22
2008-04-22
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S099000, C257S079000, C313S152000, C313S498000, C313S499000, C313S500000
Reexamination Certificate
active
07361938
ABSTRACT:
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
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English translation of German Patent Application No. DE 103 49 038 A1, 9 pages.
Bechtel Hans-Helmut
de Graaf Jan
Kop Theo Arnold
Krames Michael R.
Meyer Joerg
Jackson Jerome
Leiterman Rachel V.
Nguyen Joseph
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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