Luminescence stabilization of anodically oxidized porous...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S103000, C257S003000

Reexamination Certificate

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07119361

ABSTRACT:
A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

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