Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-01-18
2005-01-18
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C252S079100
Reexamination Certificate
active
06844263
ABSTRACT:
The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
REFERENCES:
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 6039891 (2000-03-01), Kaufman et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6139763 (2000-10-01), Ina et al.
patent: 6309560 (2001-10-01), Kaufman et al.
patent: 6547843 (2003-04-01), Shimazu et al.
patent: 0 811 665 (1997-05-01), None
patent: 2000-306873 (2000-11-01), None
patent: 2001-31950 (2001-02-01), None
patent: 2001-35820 (2001-02-01), None
patent: 2001-68438 (2001-03-01), None
Abstract of EP 0811665, May 8, 1997.
Abstract of JP 2000-306873, Nov. 12, 2000.
Abstract of JP 2001-31950, Feb. 6, 2001.
Abstract of JP 2001-35820, Feb. 9, 2001.
Abstract of JP 2001-68438, Mar. 16, 2001.
Kido Takanori
Shimazu Yoshitomo
Uotani Nobuo
Showa Denko Kabushiki Kaisha
Umez-Eronini Lynette T.
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