LPP EUV light source

Details LPP EUV light source LPP EUV light source

2008-01-08

2008-01-08

Berman, Jack I. (Department: 2881)

Radiant energy

Radiant energy generation and sources

With radiation modifying member

C250S493100, C378S119000

Reexamination Certificate

active

07317196

ABSTRACT:
An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.

REFERENCES:
patent: 2759106 (1956-08-01), Wolter
patent: 3150483 (1964-09-01), Mayfield et al.
patent: 3232046 (1966-02-01), Meyer
patent: 3279176 (1966-10-01), Boden
patent: 3746870 (1973-07-01), Demarest
patent: 3960473 (1976-06-01), Harris
patent: 3961197 (1976-06-01), Dawson
patent: 3969628 (1976-07-01), Roberts et al.
patent: 4042848 (1977-08-01), Lee
patent: 4088966 (1978-05-01), Samis
patent: 4143275 (1979-03-01), Mallozzi et al.
patent: 4162160 (1979-07-01), Witter
patent: 4203393 (1980-05-01), Giardini
patent: 4364342 (1982-12-01), Asik
patent: 4369758 (1983-01-01), Endo
patent: 4504964 (1985-03-01), Cartz et al.
patent: 4507588 (1985-03-01), Asmussen et al.
patent: 4536884 (1985-08-01), Weiss et al.
patent: 4538291 (1985-08-01), Iwamatsu
patent: 4561406 (1985-12-01), Ward
patent: 4596030 (1986-06-01), Herziger et al.
patent: 4618971 (1986-10-01), Weiss et al.
patent: 4626193 (1986-12-01), Gann
patent: 4633492 (1986-12-01), Weiss et al.
patent: 4635282 (1987-01-01), Okada et al.
patent: 4751723 (1988-06-01), Gupta et al.
patent: 4752946 (1988-06-01), Gupta et al.
patent: 4774914 (1988-10-01), Ward
patent: 4837794 (1989-06-01), Riordan et al.
patent: 4928020 (1990-05-01), Birx et al.
patent: 5023897 (1991-06-01), Neff et al.
patent: 5027076 (1991-06-01), Horsley et al.
patent: 5102776 (1992-04-01), Hammer et al.
patent: 5126638 (1992-06-01), Dethlefsen
patent: 5142166 (1992-08-01), Birx
patent: 5175755 (1992-12-01), Kumakhov
patent: 5313481 (1994-05-01), Cook et al.
patent: 5319695 (1994-06-01), Itoh et al.
patent: RE34806 (1994-12-01), Cann
patent: 5411224 (1995-05-01), Dearman et al.
patent: 5448580 (1995-09-01), Birx et al.
patent: 5504795 (1996-04-01), McGeoch
patent: 5729562 (1998-03-01), Birx et al.
patent: 5763930 (1998-06-01), Partlo
patent: 5866871 (1999-02-01), Birx
patent: 5936988 (1999-08-01), Partlo et al.
patent: 5963616 (1999-10-01), Silfvast et al.
patent: 5970076 (1999-10-01), Hamada
patent: 6031241 (2000-02-01), Silfvast et al.
patent: 6031598 (2000-02-01), Tichenor et al.
patent: 6039850 (2000-03-01), Schulz
patent: 6051841 (2000-04-01), Partlo
patent: 6064072 (2000-05-01), Partlo et al.
patent: 6172324 (2001-01-01), Birx
patent: 6195272 (2001-02-01), Pascente
patent: 6285743 (2001-09-01), Kondo et al.
patent: 6307913 (2001-10-01), Foster et al.
patent: 6317448 (2001-11-01), Das et al.
patent: 6377651 (2002-04-01), Richardson et al.
patent: 6396900 (2002-05-01), Barbee, Jr. et al.
patent: 6452194 (2002-09-01), Bijkerk et al.
patent: 6452199 (2002-09-01), Partlo et al.
patent: 6493423 (2002-12-01), Bisschops
patent: 6566667 (2003-05-01), Partlo et al.
patent: 6566668 (2003-05-01), Rauch et al.
patent: 6576912 (2003-06-01), Visser et al.
patent: 6580517 (2003-06-01), Lokai et al.
patent: 6586757 (2003-07-01), Melnychuk et al.
patent: 6590959 (2003-07-01), Kandaka et al.
patent: 6647086 (2003-11-01), Amemiya et al.
patent: 6744060 (2004-06-01), Ness et al.
patent: 6804327 (2004-10-01), Schriever et al.
patent: 6815700 (2004-11-01), Melnychuk et al.
patent: 6865255 (2005-03-01), Richardson
patent: 2003/0068012 (2003-04-01), Ahmad et al.
patent: 2003/0219056 (2003-11-01), Yager et al.
patent: 2000091096 (2000-03-01), None
Andreev, et al., “Enhancement of laser/EUV conversion by shaped laser pulse interacting with Li-contained targets for EUV lithography”, Proc. OfSPIE, 5196:128-136, (2004).
Apruzese, J.P., “X-Ray Laser Research Using Z Pinches,”Am. Inst. of Phys. 399-403, (1994).
Bollanti, et al., “Compact Three Electrodes Excimer Laser IANUS for a POPA Optical System,”SPIE Proc. (2206)144-153, (1994).
Bollanti, et al., “Ianus, the three-electrode excimer laser,”App. Phys. B(Lasers&Optics) 6(4):401-406, (1998).
Braun, et al., “Multi-component EUV Multilayer Mirrors,”Proc. SPIE, 5037:2-13, (2003).
Choi, et al., “A 1013A/s High Energy Density Micro Discharge Radiation Source,”B. Radiation Characteristics, p. 287-290.
Choi, et al., “Fast pulsed hollow cathode capillary discharge device,”Rev. of Sci. Instrum. 69(9):3118-3122 (1998).
Choi et al., Temporal development of hard and soft x-ray emission from a gas-puff Z pinch, Rev. Sci. Instrum. 57(8), pp. 2162-2164 (Aug. 1986).
H. Eichler, et al., “Phase conjugation for realizing lasers with diffraction limited beam quality and high average power,” Techninische Universitat Berlin, Optisches Institut, (Jun. 1998).
R. Fedosejevs and A. A. Offenberger, “Subnanosecond pulses from a KrF Laser pumped SF6Brillouin Amplifier”, IEEE J. QE 21, 1558-1562 (1985).
Feigl, et al., “Heat Resistance of EUV Multilayer Mirrors for Long-time Applications,”Microelectric Engineering, 57-58:3-8, (2001).
Fomenkov, et al., “Characterization of a 13.5nm Source for EUV Lithography based on a Dense Plasma Focus and Lithium Emission,” Sematech Intl. Workshop on EUV Lithography (Oct. 1999).
Giordano and Letardi, “Magnetic pulse compressor for prepulse discharge in spiker-sustainer excitati technique for Xe-Cl lasers,” Rev. Sci. Instrum 65(8), pp. 2475-2481 (Aug. 1994).
Hansson, et al., “Xenon liquid jet laser-plasma source for EUV lithography,” Emerging Lithographic Technologies IV,Proc. Of SPIE, vol. 3997:729-732 (2000).
Jahn, Physics of Electric Propulsion, McGraw-Hill Book Company, (Series in Missile and Space U.S.A.), Chap. 9, “Unsteady Electromagnetic Acceleration,” pp. 257 (1968).
Shibin Jiang, et al., “Compact multimode pumped erbium-doped phosphate fiber amplifiers,” Optical Engineering, vol. 42, Issue 10, pp. 2817-2820 (Oct. 2003).
Kato, Yasuo, “Electrode Lifetimes in a Plasma Focus Soft X-Ray Source,”J. Appl. Phys. (33) Pt. 1, No. 8:4742-4744 (1991).
Kato, et al., “Plasma focus x-ray source for lithography,”Am. Vac. Sci. Tech. B., 6(1): 195-198 (1988).
K. Kuwahara et al., “Short-pulse generation by saturated KrF laser amplification of a steep Stokes pulse produced by two-step stimulated Brillouin scattering”, J. Opt. Soc. Am. B 17, 1943-1947 (2000).
Lange, Michael R., et al., “High gain coefficient p

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