LPE technique for reducing edge growth

Details LPE technique for reducing edge growth LPE technique for reducing edge growth

1975-02-21

1976-04-13

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 252 623GA, 156622, H01L 738

Patent

active

039501957

ABSTRACT:
Described is a liquid phase epitaxy technique using conventional slider apparatus in which, after heating the source solution to saturation, the solution temperature is rapidly reduced so that supersaturation takes place but heterogeneous nucleation does not. The solution is allowed to reach convective equilibrium and only then is brought into contact with the substrate. Once in contact, the temperature is maintained constant so that convection currents in the solution are substantially reduced. This technique has several advantages: reduced edge growth, increased usable wafer area, and reduced wipe-off problems.

REFERENCES:
patent: 3741825 (1973-06-01), Lockwood et al.
J. Crystal Growth, Vol. 20, pp. 13-23 (1973).
Abst. 68, Electrochem. Soc. Mtg., May 12-17, 1974.
J. Crystal Growth, Vol. 27, pp. 49-61 (1974).
J. Crystal Growth, Vol. 27, pp. 1-5 (1974).

Affiliated with

Also associated with

Rating

LPE technique for reducing edge growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with LPE technique for reducing edge growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LPE technique for reducing edge growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-749982