LPE Growth on group III-V compound semiconductor substrates cont

Details LPE Growth on group III-V compound semiconductor substrates cont LPE Growth on group III-V compound semiconductor substrates cont

1983-10-31

1985-02-19

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, H01L 21208

Patent

active

045003670

ABSTRACT:
Liquid phase epitaxy (LPE) growth of a Group III-V semiconductor compound layer upon a Group III-V semiconductor compound substrate containing phosphorus is accomplished in a graphite meltholder by heating the substrate in an atmosphere of nitrogen or helium and contacting the substrate with a liquid melt, capable of growing the layer, in an atmosphere of hydrogen.

REFERENCES:
patent: 3665888 (1972-05-01), Bergh et al.
patent: 3960618 (1976-06-01), Kawamura et al.
patent: 3975218 (1976-08-01), Ruehrwein
patent: 3996891 (1976-12-01), Isawa et al.
patent: 4072544 (1978-02-01), DeWinter et al.
patent: 4154630 (1979-05-01), Diguet et al.
patent: 4357897 (1982-11-01), Leswin
patent: 4372791 (1983-02-01), Hsieh
"Suppression of Thermal Damage of InP by Adding Ar in H.sub.2 Atmosphere," K. Pak et al., Japanese Journal of Applied Physics, vol. 18, No. 9, 1979, pp. 1859-1860.

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