LPCVD Deposition of tantalum silicide

Details LPCVD Deposition of tantalum silicide LPCVD Deposition of tantalum silicide

1984-03-22

1985-03-12

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 93, 427 95, 4272552, 4272557, H01L 21285

Patent

active

045045216

ABSTRACT:
An improved method of forming a polycide structure is disclosed. An in-situ doped silicon layer is deposited in the amorphous state by LPCVD at 560.degree.-580.degree. C., a polycrystalline tantalum rich tantalum silicide layer is deposited thereover by LPCVD and the structure annealed to convert the silicon to the polycrystalline state and the tantalum silicide to TaSi.sub.2. The deposition and annealing procedures are carried out sequentially in a single reaction vessel.

REFERENCES:
patent: 4332839 (1982-06-01), Levinstein et al.
patent: 4357179 (1982-11-01), Adams
patent: 4359490 (1982-11-01), Lehrer
patent: 4362597 (1982-12-01), Fraser et al.
patent: 4411734 (1983-10-01), Maa
Harbeke et al., RCA Review, vol. 44, pp. 287-312, Jun. 1983.
Lehrer et al., Proc. First International Sympos. (VLSI) Science and Technology, pp. 258-264 Oct., 1982.
Murarka, Silicides for VLSI applications--Academic Press, 1983, pp. 115-131, and 180-183.
Harbeke et al., RCA Review vol. 44, pp. 287-312, Jun. 1983.

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