Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1995-01-18
1997-02-11
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257121, 257356, H01C 2974, H01C 31111, H01C 2362
Patent
active
056024045
ABSTRACT:
Silicon controlled rectifier (SCR) structures are provided that are triggered by lightly doped diffusion (LDD) junction breakdown voltages of approximately 4-10 V. The SCR structures eliminate the need for the field plate diode and resistor secondary protection elements found in conventional SCR-based ESD protection circuits, thus minimizing RC delay on the signal line and reducing circuit size. The SCR structures are compatible with existing CMOS processes and are scalable to submicron technology.
REFERENCES:
patent: 3231796 (1966-01-01), Shandert
patent: 4437107 (1984-03-01), Jonsson et al.
patent: 4631561 (1986-12-01), Foroni et al.
patent: 5225702 (1993-07-01), Chatterjee
patent: 5276350 (1994-01-01), Merrill et al.
patent: 5343053 (1994-08-01), Avery
patent: 5401485 (1995-03-01), Anceau
Chen Hung-Sheng
Shyu Chin-Miin
Teng C. S.
Meier Stephen
National Semiconductor Corporation
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