Low voltage triggered snap-back device

Details Low voltage triggered snap-back device Low voltage triggered snap-back device

1990-05-08

1991-08-27

Larkins, William D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 35, 361 91, H01L 27088

Patent

active

050437828

ABSTRACT:
A protection device for an integrated circuit includes short and longer channel length structures, each of which provides a parasitic bipolar transistor, connected between a terminal of the integrated circuit and a source of reference voltage. The short channel length structure has a breakdown voltage greater than the supply voltage for the integrated circuit, and less than the insulator damage threshold of the integrated circuit. The conduction through the short channel length structure after initiation of a transient phenomena causes the longer channel length structure to conduct before the transient exceeds the breakdown voltage of the integrated circuit and the short channel length structure. The longer channel length structure operatges in the "snap-back" conduction mode when the current density exceeds a critical value to conduct away the transient energy.

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