Low voltage transient voltage suppressor with tapered recess...

Details Low voltage transient voltage suppressor with tapered recess... Low voltage transient voltage suppressor with tapered recess...

2007-07-11

2010-06-15

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

C438S673000

Reexamination Certificate

active

07737533

ABSTRACT:
A semiconductor junction device includes a substrate of low resistivity semiconductor material having a preselected polarity. A tapered recess extends into the substrate and tapers inward as it extends downward from an upper surface of the substrate. A semiconductor layer is disposed within the recess and extends above the upper surface of the substrate. The semiconductor layer has a polarity opposite from that of the substrate. A metal layer overlies the semiconductor layer.

REFERENCES:
patent: 4003036 (1977-01-01), Jenne
patent: 4296429 (1981-10-01), Schroeder
patent: 4375124 (1983-03-01), Cogan
patent: 4379305 (1983-04-01), Mitchell
patent: 4966433 (1990-10-01), Blonder
patent: 5501998 (1996-03-01), Chen
patent: 6365932 (2002-04-01), Kouno et al.
patent: 7102199 (2006-09-01), Robb et al.

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