Low voltage topology for radio frequency integrated circuit...

Details Low voltage topology for radio frequency integrated circuit... Low voltage topology for radio frequency integrated circuit...

1998-12-17

2001-05-15

Pascal, Robert (Department: 2817)

Wave transmission lines and networks

Coupling networks

Nonreciprocal gyromagnetic type

C333S176000

Reexamination Certificate

active

06232848

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates in general to radio frequency (RF) circuits, and more particularly to an integrated RF coupling topology using on-chip capacitively coupled resonant elements to DC isolate circuit block elements which are required to be connected in series and share a common DC current.
BACKGROUND OF THE INVENTION
The era of wireless communications is expanding at an unprecedented rate with the introduction of PCS (Personal Communication System) devices into the consumer market. The key issues involved in designing wireless systems are (i) integrating the digital base band subsystem with a high frequency analogue front end, and (ii) ensuring low voltage/power.
Presently, the majority of RC integrated circuits (IC's) are implemented using GaAs and bipolar technology, whereas the base band subsystems are implemented using CMOS technology. A significant amount of research is being expended towards developing RF IC's using CMOS technology (see A. N. Karanicolas, “A2.7V 900 MHz LNA and mixer,” Proc. IEEE Inter. Solid-State Circuits Conference, 1996 and A. Rofourgaran, J. Y. C. Chang, M. Rofougaran, and A. A. Abidi, “A IGHz CMOS RF front-end IC for a direct-conversion wireless receiver,” IEEE J. of Solid State Circuits, vol. 31, no. 7, pp. 880-889, July 1996).
Many of the recently developed CMOS circuits have the ability of operating with voltages as low as from 1.5 to 2.0 V. (see (1) D. K. Schaeffer and T. H. Lee, “A 1.5V, 1.5 GHz CMOS low noise amplifier,” IEEE J. of Solid State Circuits, vol. 32, no. 5, pp. 745-759, May 1997; (2) P. J. Sullivan, B. A. Xavier and W. H. Ku, “Low voltage performance of a microwave CMOS Gilbert cell mixer,” IEEE J. of Solid State Circuits, vol. 32, no. 7, pp. 1151-1155, July 1997; (3) B. Razavi, “A 1.5V 900 MHz down-conversion mixer,” ISSCC Dig. Tech. Paper, February 1996, pp. 48-49; and (4) B. Razavi, “Design Considerations for Direct-Considerations for Direct-Conversion Receivers,” IEEE Trans, on Circuits and Systems-II: Analog and Digital Signal Processing, vol. 44, no. 6, pp. 428-435, 1997).
Some effort has also been expended in the art to reduce the voltage supply for bipolar based technologies. In the work by Long, J. R. Lone and M. A. Copeland, “A 1.9 GHz low voltage silicon bipolar receiver front-end for wireless personal communications systems,” IEEE J. of Solid State Circuits, vol. 30, no. 12, pp. 1428-1448, on-chip transformers are used to reduce the amount of DC head room required between the power rails.
SUMMARY OF THE INVENTION
According to the present invention, a low voltage topology is provided for DC isolating circuit elements which are normally connected in series and which share a common DC current. The topology of the present invention uses no on-chip transformers to reduce the voltage supply as in the prior art but instead uses capacitively coupled LC tanks.


REFERENCES:
patent: 5301361 (1994-04-01), Koike
Derek K. Shaeffer et al., “A 1.5-V, 1.5-GHz CMOS Low noise Amplifier,” IEEE Journal of Solide-State Circuits, vol. 32, No. 5, May 1997.
P.J. Sullivan et al., “Low Voltage Performance of a Microwave SMOS Gilbert Cell Mixerr,” IEEE Journal of Solid-State Circtuis, vol. 32, No. 7, Jul. 1997.
Andrew N. Karanicolas, “A 2.7V 900MHz CMOS LNA and Mixer”, 1996 IEEE International Solid-State Circuits Conference, Feb. 8, 1996.
Ahmadreza Rofougaran et al., “A 1 GHz CMOS RF Front-End IC for a Direct-Conversion Wireless Receiver,” IEEE Journal of Solid-State Circuits, vol. 31, No. 7, Jul. 1996.
Behzad Razavi, “A 1.5V 900MHz Downcoversion Mixer”, 1996 IEEE International Solid-State Circuits Conference, Feb. 8, 1996.
Behzad Razavi, “Design Consideration for Direct-Conversion Receivers,” IEEE Transactions on Circuits and Systems-11:Analog and Digital Signal Processing, vol. 44, No. 6, Jun. 1997.
John R. Long et al., “A 1.9 GHz Low-Voltage Silicon Bipolar Receiver Front-End for Wireless Personal Communications Systems”, IEEE Journal of Solid-State Circuits, vol. 30, No. 12, Dec. 1995.
Ed Callaway, “1-Volt RF Circuit Design for Pagers,” AACD, 1998.

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