Static information storage and retrieval – Floating gate – Particular connection
Patent
1997-07-09
1999-11-16
Zarabian, A.
Static information storage and retrieval
Floating gate
Particular connection
365149, G11C 1134
Patent
active
059869313
ABSTRACT:
P channel EEPROM cells are designed for integration into arrays written with single polarity signals developed from small, low power charge pumps. These cells reduce the additional masking steps that must be added to a CMOS logic process for EEPROM to only one additional step. The novel cells of this invention enable the array to function with a V.sub.PP about 2 V less than that required by an N channel EEPROM cell, with similar writing speed and tunnel oxide thickness.
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Caserza Steven F.
Zarabian A.
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