Low voltage semi-folded metal oxide semiconductor field...

Details Low voltage semi-folded metal oxide semiconductor field... Low voltage semi-folded metal oxide semiconductor field...

2006-11-07

2006-11-07

Nguyen, Patricia (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including differential amplifier

C330S261000

Reexamination Certificate

active

07132887

ABSTRACT:
A low voltage semi-folded metal oxide semiconductor field effect transistor (MOSFET) amplifier circuit for use in a ring oscillator. Operation at a reduced minimum power supply voltage is achieved via a circuit topology with selectively coordinated transistor biasing and channel dimensions.

REFERENCES:
patent: 4583037 (1986-04-01), Sooch
patent: 4893090 (1990-01-01), Boudewijns
patent: 5729178 (1998-03-01), Park et al.
patent: 5783956 (1998-07-01), Ooishi
patent: 5825236 (1998-10-01), Seevinck et al.
patent: 6590456 (2003-07-01), Yang
patent: 6781463 (2004-08-01), Burt
U.S. Appl. No. 10/957,953, filed Oct. 4, 2004.

Affiliated with

Also associated with

Rating

Low voltage semi-folded metal oxide semiconductor field... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage semi-folded metal oxide semiconductor field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage semi-folded metal oxide semiconductor field... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3670471