Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1991-01-18
1992-11-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257900, 257408, 365 96, H01L 2906, H01L 2710, H01L 2702, H01L 2348
Patent
active
051631806
ABSTRACT:
An antifuse structure according to a first aspect of the present invention is programmed by snap-back breakdown and includes a semiconductor substrate of a first conductivity type, an insulating layer over the surface of the semiconductor substrate, a conductive gate disposed over the insulating layer, spacer elements disposed at the outer edges of the conductive gate, spaced-apart first and second lightly doped regions of a second conductivity type disposed in the semiconductor substrate, the first and second lightly doped regions aligned to the edges of the conductive gate, third and fourth more heavily doped regions of the second conductivity type disposed in the semiconductor substrate, the third and fourth regions contiguous with the first and second regions, respectively, and aligned to the edges of the spacer elements, and a conductive filament in the insulating layer connecting the conductive gate to one of the second and fourth doped regions.
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Bakker Gregory W.
Eltoukhy Abdelshafy A.
Hu Chenming
Actel Corporation
Carroll J.
D'Alessandro Kenneth
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