Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-09-27
1997-11-11
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular biasing
36518529, 36518533, 36518521, 36518518, 36518522, G11C 700, G11C 1140
Patent
active
056871201
ABSTRACT:
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.
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Chang Jia-Hwang
Chang Shang-De
Chow Edwin
Nguyen Viet Q.
Rohn Corporation
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