Low voltage monolithic protection diode with a low capacitance

Details Low voltage monolithic protection diode with a low capacitance Low voltage monolithic protection diode with a low capacitance

1994-04-26

1995-03-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257110, 257112, 257132, 257154, 257162, 257355, 257603, 257610, H01L 2990, H01L 29747

Patent

active

054019850

ABSTRACT:
A monolithic protection component is formed in a P-type low-doped semiconductor substrate. The protection diode comprises, in an upper surface of the substrate, a first and a second N-type well with a mean doping level; at the surface of the first well, a first highly doped P region; at the surface of the second well, a second very highly doped N region; a third very highly doped N region laterally contacting the first well; a fourth highly-doped P region beneath a portion of the lower surface of the third region; a first metallization contacting the surface of the first and second regions which constitute the first diode terminal; and a second metallization coupled to a P-type area extending up to the fourth region and second well, which forms the second terminal of the diode. The protection component provides a unidirectional protection diode. Two of the protection components may be combined in a single structure to provide a bidirectional protection diode.

REFERENCES:
patent: 4922371 (1990-05-01), Gray et al.
patent: 5311042 (1994-05-01), Anceau
Patent Abstracts of Japan, vol. 10, No. 221.

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