Low-voltage low-power static RAM

Details Low-voltage low-power static RAM Low-voltage low-power static RAM

1991-08-29

1993-03-02

Fears, Terrell W.

Static information storage and retrieval

Powering

365227, 365203, G11C 1300

Patent

active

051915545

ABSTRACT:
A low-power low-voltage CMOS six-transistor static random access memory (SRAM), which can operate on a power supply voltage which is less than the sum of the NMOS and PMOS threshold voltages, does not include any analog or metastable sense amplifier stages. The selected cell is allowed to pull one of its bitline pair all the way down to ground. Thus, full logic levels appear on the bitline pair. Only one line of the bitline pair is connected to the following gate stage. Perferably bitline percharge transistors are connected to always pull up any unselected bitline pair.

REFERENCES:
patent: 4475178 (1984-10-01), Kinoshka
Aoki, et al., FAM 16.1: A1.5V Dram for Battery-Based Applications, 1989 IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp. 238, 239 and 349.

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