Low-voltage image sensor having multiple gates between a...

Details Low-voltage image sensor having multiple gates between a... Low-voltage image sensor having multiple gates between a...

2007-10-19

2010-11-09

Luu, Thanh X (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC, C348S308000

Reexamination Certificate

active

07829834

ABSTRACT:
Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.

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KIPO Notice of Patent Grant dated May 28, 2008 for the corresponding application KR 10-2007-0022980.

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