Low-voltage, high-noise immunity I.sup.2 L interface

Details Low-voltage, high-noise immunity I.sup.2 L interface Low-voltage, high-noise immunity I.sup.2 L interface

1980-12-22

1983-06-28

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307477, 357 92, H03K 19091, H03K 19092

Patent

active

043908020

ABSTRACT:
An improved low-voltage, low-current, high-noise immunity I.sup.2 L interface is disclosed for control of associated I.sup.2 L logic circuitry, which interface does not require the inclusion of the heretofore conventional low-pass RC filter found in prior devices. As a result, considerable chip area previously occupied by such low-pass filters is now saved. Moreover, by isolating a portion of the interface switching circuitry from all other portions of the I.sup.2 L circuitry a substantial reduction in source current is effected. This objective is accomplished by fabricating at least one of the I.sup.2 L gates and its injector transistor in a separate epitaxial tub.

REFERENCES:
patent: Re29962 (1979-04-01), Russell
patent: 4032902 (1977-06-01), Herndon
patent: 4065680 (1977-12-01), Russell
patent: 4112511 (1978-09-01), Heald
patent: 4115711 (1978-09-01), Moussie
patent: 4130826 (1978-12-01), Bachle et al.
patent: 4137109 (1979-01-01), Aiken et al.
patent: 4158782 (1979-06-01), Price, Jr.
patent: 4180749 (1979-12-01), Sloan

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