Low voltage four-layer device with offset buried region

Details Low voltage four-layer device with offset buried region Low voltage four-layer device with offset buried region

1999-03-01

2000-07-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

257112, 257164, 257168, 257173, H01L 2974, H01L 31111

Patent

active

060842539

ABSTRACT:
A four-layer low voltage thyristor device (30) in which the breakover voltage is independent of the holding current. Rather than forming a buried region (38) underlying the emitter region (42), the buried region 38 is formed laterally to the side of the emitter (42). In order to form a low breakover voltage device, the buried region (38) is required to be highly doped, but the resulting junction (40) does not approach the emitter junction (48). A low breakover voltage (5 V-12-V) thyristor can thus be realized.

REFERENCES:
patent: 5429953 (1995-07-01), Byatt
patent: 5479031 (1995-12-01), Webb et al.
patent: 5719413 (1998-02-01), Bernier
patent: 5753943 (1998-05-01), Okabe et al.
ST SGS-Thomson Microelectronics, Data Sheet p.p. 1/8-8/8, Oct. 1997.
ST SGS-Thomson Microelectronics, Data Sheet SMP Trisil, date unknown.
Handwritten note by Jack L. Turner, Jr., depicting SGS-Thomson Low Voltage (10v) device, Mar., 1997.

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