Low voltage electron source with self aligned gate...

Details Low voltage electron source with self aligned gate... Low voltage electron source with self aligned gate...

2003-12-05

2008-12-02

Jackson, Jerome (Department: 2815)

Electric lamp and discharge devices

Discharge devices having a thermionic or emissive cathode

C313S311000, C313S336000

Reexamination Certificate

active

07459839

ABSTRACT:
An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 108/cm2. Such an electron source can be modulated with an extra low voltage, emits electrons with high current density and high uniformity, and operates with high energy-efficiency and long lifetime.

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