Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-05-23
2000-08-08
Fourson, George
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257615, H01L 2128
Patent
active
06100586&
ABSTRACT:
An electrical contact that comprises a layer of a p-type gallium nitride material, a metal layer, and an intermediate layer of a material different from the gallium nitride material and the metal layer. The intermediate layer is sandwiched between the layer of p-type gallium nitride material and the metal layer. The material of the intermediate layer may be a Group III-V semiconductor that has high band-gap energy, lower than that of the p-type gallium nitride material. The intermediate layer may alternatively include layers of different Group III-V semiconductors. The layers of the different Group III-V semiconductors are arranged in order of their band-gap energies, with the Group III-V semiconductor having the highest band-gap energy next to the layer of the p-type gallium nitride material, and the Group III-V semiconductor having the lowest band-gap energy next to the metal layer. As a further alternative, the material of the intermediate layer may be a metal nitride. As a yet further alternative, the material of the intermediate layer may be a gallium nitride material in which a percentage of the nitrogen atoms are replaced by a mole fraction x of atoms of at least one other Group V element. The value of x is close to zero next to the p-type gallium nitride material, and is substantially greater next to the metal layer. This intermediate layer may alternatively be sandwiched between a layer of n-type gallium nitride material and a metal layer to make an n-contact.
REFERENCES:
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patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5679965 (1997-10-01), Schetzina
"Higher Visibility for LEDS", IEEE Spectrum, vol. 31, No. 7, Jul. 1994, pp. 30-34, 39.
Chen Yong
Schneider Richard P.
Wang Shih-Yuan
Yang Long
Agilent Technologie,s Inc.
Fourson George
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