Low voltage diode with reduced parasitic resistance and...

Details Low voltage diode with reduced parasitic resistance and... Low voltage diode with reduced parasitic resistance and...

2007-01-19

2010-11-16

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S449000, C257S450000, C257S451000, C257S452000, C257S453000, C257S454000, C257S455000, C257S456000, C257S457000

Reexamination Certificate

active

07834367

ABSTRACT:
A method of making a diode begins by depositing an AlxGa1−xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n− GaN layer, an AlxGa1−xN barrier layer, and an SiO2dielectric layer. A portion of the dielectric layer is removed and a Schottky metal deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au-Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n−, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal,; and an ohmic contact is deposited on the n+ layer.

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