Low voltage, deep junction device and method

Details Low voltage, deep junction device and method Low voltage, deep junction device and method

1991-04-17

1992-08-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

148DIG12, 437 86, 437974, H01L 2120, H01L 2176

Patent

active

051418878

ABSTRACT:
A method of fabricating a low voltage, deep junction semiconductor device includes providing first and second wafers of opposite conductivity types, each having a dopant concentration of at least 4.0.times.10.sup.16 atoms/cc. After cleaning the wafers and removing heavy metal impurities therefrom by gettering, the wafers are bonded together. This method results in the successful fabrication of semiconductor devices having a junction depth in the range of 20 to 500 microns and a breakdown voltage of less than 20 volts.

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Shimbo et al., "Silicon-to-Silicon Direct Bonding Method", J. Appl. Phys. 60(8) 15 Oct. 1986, pp. 2987-2989.

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