Low-voltage and interface damage-free polymer memory device

Details Low-voltage and interface damage-free polymer memory device Low-voltage and interface damage-free polymer memory device

2005-10-04

2005-10-04

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S295000, C257S314000

Reexamination Certificate

active

06952017

ABSTRACT:
One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions.One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.

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